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P S H I 0412 have ceased production, 1DI825 is upgrade products

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3-level HV-IGBT Drivers [18]
IGBT driver [29]
3-level IGBT Driver Core [8]
ALCON capacitance [3]
E series IGBT driver core [13]
IGBT driver circuit [1]
High Power IGBT Driver [7]
SVG / SVC [1]
application Wind power generation、Inverter、Converter、Welding machine &cutting、Induction heating、Trac [1]
HV-IGBT drivers [34]
IGBT driver, thyristor , diode [2]
Parallel Resonant Driver [1]
Plug & Play IGBT Driver [5]
Thyristor Driver [2]

BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

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P S H I 0412 have ceased production, 1DI825 is upgrade products

Place of Origin : Beijing, China

Brand Name : power-sem

Model Number : PSHI 0412 have ceased production ,1DI825 is upgrade products

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1.feature

● ASIC single IGBT driver
● Suitable for all IGBTs up to 1200V/1700V
● Short circuit and over current protection by VCEsat monitoring
● Isolation due to nanometer amorphous transformer
● Supply undervoltage protection (<12.5V)
● Error memory
● Error "soft turn-off"
● Turn-off spike restrain by "dynamic soft turnoff"
● Internal isolated DC/DC power supply
● ±25A peak current output
● IGBT gate drive voltage+15V/-9V
● 650ns signal conversion time
● 110ns error signal feedback time
● 400ns narrow pulse inhibit eliminate radio frequency interference
● Max. working frequency 100kHz
● Error chain function, low level active
● Clearance distance from primary side to secondary side is 42mm

2.parameter

Absolute Maximum Ratings(Ta=25℃)

Symbol	Term	Values	Unit
V_{S MAX.}	Max. supply voltage primary	+16	V
I_{S MAX.}	Max. supply current primary	300	mA
P_DC/DC	Total power of DC/DC isolation power output	4	W
V_in	Max. PWM input level	V_S+0.5	V
V_iH	Max. logic signal input voltage (Mode select;reset signal;external error)	V_S+0.5	V
I_OC	Max. logic signal output currect (Open-collector output current)	10	mA
I_outAV	Output average current per channel	120	mA
I_outPEAK	Output peak current per channel	±25	A
V_CES	IGBT collector-emitter voltage	1700	V
V_{isol IO}	Isolation voltage IN-OUT(10 sec.AC)	5000	V
R_{Gon/off min}	Minimal R_gon/R_goff	1	Ω
Q_out/pulse	Charge per pulse	±15^①	μC
dv/dt	Rate of rise and fall of voltage	75	kV/μs
f_SWmax	Max. working frequency	100	kHz
T_op	Operating temperature	-40...+85	℃
T_stg.	Storage temperatature	-45...+85	℃

Electrical Characteristics(Ta=25℃ )

Symbol	Term	Parameter				Unit
Symbol	Term	Min.	Typ.	Max.	Rec.	Unit
V_S	Supply voltage primary	14.5	15	15.5	15	V
I_S	No-load currect primary f_SW=0kHz f_SW=20kHz f_SW=100kHz		80 100 130			mA
V_IT+	Input high level: 15V level 5V level	12 3.2				V
V_IT_－	Input low level: 15V level 5V level			4.5 1.9		V
R_in	Input resistance		33k			Ω
V_G(on)	Turn-on gate voltage		+15			V
V_G(off)	Turn-off gate voltage		-9			V
t_d(on)IO	IN-OUT turn-on delay time		650			ns
t_d(off)IO	IN-OUT turn-off delay time		600			ns
t_d(err)	Error signal return delay time V_CEerror happen-error signal output		110			ns
t_md	Narrow pulse restrained		400			ns
V_CEstat	Reference voltage for V_CEmonitoring V_CE=1700V V_CE=1200V	2		6.8	6.2 5.3	V
V_Level	Logic level (External error input; resetsignal; mode select)		+8		+15	V
t_pReset	Low level automatic reset time		10^②			μs
C_PS	Primary to secondary capacitance		12			pf

① This value can be expanded externally (on adapter board) by pins.

② This value is also the width of output minimum error signal.

3.application

● Single or bridge circuit
● Inverter
● Welding machine
● Induction heating
● Converter
● High power UPS
● High power high frequency SMPS

Product Tags:

IGBT driver core

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