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PSHI 0 4 2 0

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3-level HV-IGBT Drivers [18]
IGBT driver [29]
3-level IGBT Driver Core [8]
ALCON capacitance [3]
E series IGBT driver core [13]
IGBT driver circuit [1]
High Power IGBT Driver [7]
SVG / SVC [1]
application Wind power generation、Inverter、Converter、Welding machine &cutting、Induction heating、Trac [1]
HV-IGBT drivers [34]
IGBT driver, thyristor , diode [2]
Parallel Resonant Driver [1]
Plug & Play IGBT Driver [5]
Thyristor Driver [2]

BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

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PSHI 0 4 2 0

Place of Origin : Beijing, China

Brand Name : power-sem

Model Number : PSHI 0420

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1.feature

●ASIC dual IGBT driver
●Suitable for all IGBTs up to 1200V/1700V
●Half-bridge mode select,also two independent single drives
●Short circuit and over current protection by VCEsat monitoring
●Isolation due to nanometer amorphous transformer
●Supply undervoltage protection (<12.5V)
●Error memory
●Error “soft turn-off"
●Driver interlock top/bottom in half-bridge mode
●Dead time adjustable
●Internal isolated DC/DC power supply
●±15A peak current output
●IGBT gate drive voltage+15V/-9V
●350ns signal conversion time
●110ns error signal feedback time
●100ns narrow pulse inhibit eliminate radio frequency interference
●Max. working frequency 100kHz
●Error chain function, low level active
●Clearance distance from primary side to secondary side is 39mm
●Provide surface-mounted model to fit for mass production

2.parameter

Absolute Maximum Ratings(Ta=25℃)

Symbol	Term	Values	Unit
V_{S MAX.}	Max. supply voltage primary	+16	V
I_{S MAX.}	Max. supply current primary	300	mA
P_DC/DC	Total power of DC/DC isolation power output	4	W
V_in	Max. PWM input level Vin A; Vin B	V_S+0.5	V
V_iH	Max. logic signal input voltage (Mode select;reset signal;external error)	V_S+0.5	V
I_OC	Max. logic signal output currect (Open-collector output current)	10	mA
I_outAV	Output average current per channel	80	mA
I_outPEAK	Output peak current per channel	±15	A
V_CES	IGBT collector-emitter voltage	1700	V
V_{isol IO}	Isolation voltage IN-OUT(10 sec.AC)	5000	V
V_{isol AB}	Isolation voltage OUT A-OUT B(10 sec.AC)	4000	V
R_{Gon/off min}	Minimal R_gon/R_goff	1.6	Ω
Q_out/pulse	Charge per pulse	±10	μC
dv/dt	Rate of rise and fall of voltage	75	kV/μs
f_SWmax	Max. working frequency	100	kHz
T_op	Operating temperature	-40...+85	℃
T_stg.	Storage temperatature	-45...+85	℃

Electrical Characteristics(Ta=25℃)

Symbol	Term	Parameter				Unit
Symbol	Term	Min.	Typ.	Max.	Rec.	Unit
V_S	Supply voltage primary	14.5	15	15.5	15	V
I_S	No-load currect primary f_SW= 0kHz f_SW=20kHz f_SW=100kHz		75 95 125			mA
V_IT+	Input high level: 15V level 5V level	12 3.2				V
V_IT_－	Input low level: 15V level 5V level			4.5 1.9		V
R_in	Input resistance		33			kΩ
V_G(on)	Turn-on gate voltage		+15			V
V_G(off)	Turn-off gate voltage		-9			V
t_d(on)IO	IN-OUT turn-on delay time		350			ns
t_d(off)IO	IN-OUT turn-off delay time		300			ns
t_d(err)	Error signal return delay time V_CEerror happen-error signal output		110			ns
t_md	Narrow pulse restrained		100			ns
V_CEstat	Reference voltage for V_CEmonitoring V_CE=1700V V_CE=1200V	2		6.8	6.2 5.3	V
V_Level	Logic level (External error input; reset signal; modeselect)		+8		+15	V
t_pReset	V_ininput both Low reset time		10			μs
t_TD	Dead time adjusted from factory (half-bridge interlock mode)	.05^*	5			μs
C_PS	Primary to secondary capacitance		8			pf

* Attention! Pins X_S.4; X_S.45 should not connect to power
supply V_Sor GND directly，Min.R_TDis 1kΩ and corresponding t_TDis about 0.05μs.

3.application

●Single or bridge circuit
●Inverter
●Welding machine
●Induction heating
●Converter
●High power UPS
●High power high frequency SMPS

Product Tags:

IGBT driver core

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